ABB 5SHY3545L0009 Asymmetric IGCT – The Benchmark in High-Power Switching

Welcome to the official product detail page for the ABB 5SHY3545L0009. This device is part of ABB's industry-leading family of 91 mm Integrated Gate-Commutated Thyristors (IGCTs). Engineered for extreme reliability and efficiency, the 5SHY3545L0009 is a cornerstone component in modern high-power electronics, enabling the most demanding industrial and energy applications.

If you are designing or maintaining systems like medium-voltage variable speed drives (VSDs), high-power industrial motors, or flexible AC transmission systems (FACTS), this asymmetric IGCT provides the robust, latch-up-free switching performance you require.

Key Highlight: The 5SHY3545L0009 combines the low conduction loss of a GTO thyristor with the snubberless, fast-switching capability of a hard-driven gate unit, all in a single, compact package. This eliminates the need for complex snubber circuits, simplifying system design and reducing overall footprint and cost.

In-Depth Technical Overview

The ABB 5SHY3545L0009 is not just a component; it's a integrated solution. An IGCT is a power semiconductor device that includes the GTO-like main thyristor and a reverse-conducting diode, combined with a low-inductance, multi-layer printed circuit board (PCB) gate unit. This integration is key to its performance.

• Technology: Asymmetric Integrated Gate-Commutated Thyristor (IGCT)

• Wafer Diameter: 91 mm

• Configuration: Asymmetric (contains an integrated anti-parallel diode)

• Key Feature: Designed for snubberless operation, reducing system complexity and component count.

Detailed Technical Specifications & Ratings

For engineers and procurement specialists, here is the comprehensive technical data for the 5SHY3545L0009. Always consult the official datasheet for final design decisions.

Absolute Maximum Ratings (at T_case = 90°C)

On-State Characteristics

Switching Characteristics

Integrated Diode Characteristics

Thermal and Mechanical Properties

Primary Applications and Use Cases

The ABB 5SHY3545L0009 is designed for high-power, multi-megawatt applications where efficiency, reliability, and power density are non-negotiable.

1. Medium-Voltage Variable Speed Drives (VSDs / VFDs): This is the primary application. The IGCT is the switching heart of 3-level NPC (Neutral Point Clamped) and ANPC (Active NPC) inverter topologies used to control large industrial motors in sectors like mining, cement, metals, and water treatment. Its high switching efficiency directly translates to energy savings and precise motor control.

2. High-Power Industrial Motor Drives: Directly controlling the speed and torque of massive motors (e.g., >1 MW) in compressors, extruders, rolling mills, and ship propulsion systems.

3. Power Quality and Grid Applications:

   • Static Synchronous Compensators (STATCOMs): For dynamic reactive power compensation and voltage stabilization in electrical grids and at industrial sites.

   • Active Harmonic Filters: To mitigate harmonic distortion and maintain clean power, ensuring compliance with grid codes.

4. Renewable Energy Integration: Used in large-scale solar and wind power conversion systems, particularly in the inverter stage that feeds power into the medium-voltage grid.

5. Traction Converters: For powering electric locomotives and heavy rail systems, where ruggedness and high power density are critical.

Key Features and Unparalleled Benefits

Why should you choose the ABB 5SHY3545L0009 over other technologies?

• Snubberless Operation: Unlike GTOs, the IGCT is designed to switch without a snubber circuit. This leads to a significant reduction in the number of passive components, making the overall system more compact, reliable, and cost-effective.

• Low Conduction Losses: The device inherits the low forward voltage drop from GTO technology. This means less energy is wasted as heat during the on-state, leading to higher overall system efficiency, especially crucial in continuous operation.

• Ruggedness and High SOA: The IGCT has an exceptional Safe Operating Area (SOA), making it highly tolerant to fault conditions like overcurrents and voltage spikes. This inherent ruggedness enhances system-level reliability and reduces downtime.

• Uniform Switching Characteristics: ABB's precision manufacturing ensures very consistent switching behavior from device to device. This is vital for reliable series and parallel operation in multi-megawatt converters.

• Integrated Gate Unit: The gate unit is optically connected and designed for minimal inductance, enabling extremely fast and uniform turn-on and turn-off of the entire silicon wafer. This simplifies driver design and ensures optimal performance.

• Proven Reliability: With a long track record in some of the world's most critical power applications, the ABB IGCT platform, including the 5SHY3545L0009, is known for its long service life and minimal failure rates.

Frequently Asked Questions (FAQ)

Q1: What is the difference between an IGCT and an IGBT?
A1: While both are power switches, they excel in different domains. IGBTs are typically used in high-frequency applications (up to tens of kHz) at lower power levels. IGCTs are designed for very high power (multi-MW) and medium voltage (3.3 kV, 4.16 kV, 6.6 kV) applications, operating at lower frequencies (a few hundred Hz to ~1 kHz), where low conduction loss is paramount.

Q2: Can the 5SHY3545L0009 be used in series or parallel?
A2: Yes, a key strength of the IGCT platform is its suitability for series and parallel connection to achieve higher voltage or current ratings, respectively. This requires careful attention to dynamic and static voltage/current sharing, which is facilitated by the device's uniform characteristics.

Q3: What is the typical lifetime of this device?
A3: The intrinsic lifetime of the silicon is very long. The limiting factor is often the number of power cycles. Under typical operating conditions within its specifications, an IGCT can last for decades. ABB provides extensive application notes on lifetime estimation based on mission profiles.

Q4: Is the gate unit included with the 5SHY3545L0009?
A4: The IGCT is typically sold as a complete unit, which includes the power semiconductor and the integrated gate driver PCB. However, the separate fiber-optic controller and power supply for the gate unit are external system components.

Q5: How does "Asymmetric" differ from "Reverse Conducting" IGCTs?
A5: An Asymmetric IGCT (like the 5SHY3545L0009) has an integrated anti-parallel diode, making it ideal for voltage-source inverter applications. A Reverse Conducting (RC) IGCT integrates the diode in the same silicon wafer as the thyristor, offering a more compact solution for certain circuit topologies.

Compliance, Certifications & Quality

ABB semiconductors are manufactured in state-of-the-art facilities adhering to the highest international quality standards.

• Quality Management: ISO 9001

• Environmental Management: ISO 14001

• All devices undergo 100% electrical testing and rigorous quality control procedures to ensure they meet the published specifications.

Ordering Information & Support

Part Number: 5SHY3545L0009
Description: Asymmetric IGCT, 91mm, 6.5kV, 4.5kA

Ready to Integrate Reliability?
For volume pricing, lead times, and to place an order, please contact our global network of ABB distributors and sales representatives. We provide comprehensive technical support to help you integrate the 5SHY3545L0009 seamlessly into your design.

Conclusion: Powering a More Efficient and Reliable Future

The ABB 5SHY3545L0009 Asymmetric IGCT is more than just a product; it is a testament to ABB's legacy of innovation in power electronics. By offering a unique blend of low conduction loss, rugged snubberless operation, and integrated design, it provides system architects with a proven solution to build the next generation of efficient, compact, and reliable high-power conversion systems.

When your application demands uncompromising performance at the multi-megawatt level, specify the ABB 5SHY3545L0009.